Demonstration of low temperature 3D sequential FD-SOI integration down to 50 nm gate lengthProcess integration
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Electrons surfing on a sound wave as a platform for quantum optics with flying electronsQubit
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Read the publicationGate-based high fidelity spin readout in a CMOS deviceQubit
Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, 1 Christopher Bäuerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier/Apr 14, 2026
Read the publicationGate-reflectometry dispersive readout and coherent control of a spin qubit in siliconQubit
A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, R. Laviéville, L. Hutin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand & S. De Franceschi /Apr 14, 2026
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Pierre-Andre Mortemousque, Emmanuel Chanrion, Baptiste Jadot, Hanno Flentje, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Christopher Bauerle, Tristan Meunier/Apr 13, 2026
Read the publicationPerformance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic ApplicationsCharacterization
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Read the publicationIntegrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS ApplicationsCharacterization
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Read the publicationVariability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum ComputingCharacterization
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Fabio Ansaloni, Anasua Chatterjee, Heorhii Bohuslavskyi, Benoit Bertrand, Louis Hutin, Maud Vinet & Ferdinand Kuemmeth/Apr 13, 2026
Read the publication19.2 A 110mK 295µW 28nm FDSOI CMOS quantum integrated circuit with a 2.8 GHz excitation and nA current sensing of an on-chip double quantum dotCryo-CMOS
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Baptiste Jadot, Pierre-André Mortemousque, Emmanuel Chanrion, Vivien Thiney, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Christopher Bäuerle & Tristan Meunier/Apr 13, 2026
Read the publicationStatistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room TemperatureSimulation
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N. Piot, B. Brun, V. Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y.-M. Niquet, R. Maurand & S. De Franceschi/Apr 13, 2026
Read the publicationCoupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technologyQubit
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Read the publicationSpin-valley coupling anisotropy and noise in CMOS quantum dots and noise in CMOS quantum dotsQubit
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Read the publicationParity and singlet-triplet high-fidelity readout in a silicon double quantum dot at 0.5 KQubit
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Read the publicationTransport characterization of CMOS-based devices fabricated with isotopically-enriched 28Si for spin qubit applicationsCharacterization
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Read the publicationA High-Powered Cryogenic System for Sub Kelvin Electronic ApplicationsCryo-CMOS
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Read the publicationHybrid quantum-classical analog simulation of two-dimensional Fermi-Hubbard models with neutral atomsApplications
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Read the publicationQuantum remeshing and efficient encoding for fracture mechanicsApplications
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